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Determination of unknown stress states in silicon wafers using microlaser Raman spectroscopy
Please use this identifier to cite or link to this item:
http://hdl.handle.net/1860/2719
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| Title: | Determination of unknown stress states in silicon wafers using microlaser Raman spectroscopy |
| Authors: | Narayanan, S.
Kalidindi, Surya R.
Schadler, Linda S. |
| Issue Date: | 1-Sep-1997 |
| Publisher: | American Institute of Physics |
| Citation: | Journal of Applied Physics, 82 (5): pp. 2595-2602. |
| Abstract: | A new technique was developed to predict the unknown in-plane stress state and the magnitude of
the stress components in (111) silicon wafers using micro-Raman spectroscopy. The approach is
based on analyzing the combined signal from the initially degenerate peaks of the F2g mode in
silicon as a function of the angle between the incident laser polarization and the polarization selected
from the scattered beam using an analyzer. The peak position of the combined signal when plotted
as a function of the angle was found to contain the information required to estimate the magnitude
of the individual stress components in the plane-stress condition. The development of this technique
is described in this paper for (111) silicon wafers. |
| URI: | http://dx.doi.org/10.1063/1.366072
http://hdl.handle.net/1860/2719 |
| Appears in Collections: | Faculty Research and Publications (MSE)
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