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Please use this identifier to cite or link to this item: http://hdl.handle.net/1860/2719

Title: Determination of unknown stress states in silicon wafers using microlaser Raman spectroscopy
Authors: Narayanan, S.
Kalidindi, Surya R.
Schadler, Linda S.
Issue Date: 1-Sep-1997
Publisher: American Institute of Physics
Citation: Journal of Applied Physics, 82 (5): pp. 2595-2602.
Abstract: A new technique was developed to predict the unknown in-plane stress state and the magnitude of the stress components in (111) silicon wafers using micro-Raman spectroscopy. The approach is based on analyzing the combined signal from the initially degenerate peaks of the F2g mode in silicon as a function of the angle between the incident laser polarization and the polarization selected from the scattered beam using an analyzer. The peak position of the combined signal when plotted as a function of the angle was found to contain the information required to estimate the magnitude of the individual stress components in the plane-stress condition. The development of this technique is described in this paper for (111) silicon wafers.
URI: http://dx.doi.org/10.1063/1.366072
Appears in Collections:Faculty Research and Publications (MSE)

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