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Supporting information for: "Diamond-hexagonal semiconductor nanocones with controllable apex angle"
Please use this identifier to cite or link to this item:
http://hdl.handle.net/1860/1193
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| Title: | Supporting information for: "Diamond-hexagonal semiconductor nanocones with controllable apex angle" |
| Authors: | Spanier, Jonathan E.
Cao, Linyou
Laim, Lee
Ni, Chaoying
Nabet, Bahram |
| Keywords: | Nanostructured Materials
Polycrystalline Silicon
Nitride Nanocones
Nanowires
Growth
Arrays |
| Issue Date: | 2006 |
| Publisher: | American Chemical Society |
| Citation: | Journal Of The American Chemical Society, 127(40): pp. 13782-13783. http://dx.doi.org/10.1021/ja0544814 |
| Abstract: | We report on the synthesis of nanostructured and crystalline tapered Si and Ge polyhedra via metal-catalyzed chemical vapor deposition. These Si and Ge nanocones (SiNCs, GeNCs) possess tips with near-atomic sharpness, micron-scaled bases, hexagonal cross-sections, and controllable apex angles. High-resolution transmission electron microscopy, selected-area electron diffraction and Raman scattering spectroscopy and analysis indicate that the SiNCs are of the diamond-hexagonal Si(IV) phase. |
| URI: | http://hdl.handle.net/1860/1193 |
| Appears in Collections: | Faculty Research and Publications (MSE)
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